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rssMB to Phys.org · 2 days ago

Tunneling magnetoresistance in altermagnetic RuO₂-based magnetic tunnel junctions

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Tunneling magnetoresistance in altermagnetic RuO₂-based magnetic tunnel junctions

phys.org

rssMB to Phys.org · 2 days ago
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A research team affiliated with UNIST announced the successful development of a novel semiconductor device that uses a new class of materials, known as altermagnetism. This breakthrough is expected to significantly advance the development of ultra-fast, energy-efficient AI semiconductor chips.

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