Ferroelectric transistors for low-power NAND flash memory

www.nature.com

Ferroelectric transistors for low-power NAND flash memory

www.nature.com

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NatureEnglish · 4 days ago

Nature, Published online: 26 November 2025; doi:10.1038/s41586-025-09793-3

Ultralow-power ferroelectric field-effect transistors are used to achieve low-power NAND flash memory, overcoming the trade-off between multi-level capability and power efficiency and paving the way for next-generation storage memory.

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